|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
- STL47N60M6
- STMicroelectronics
-
1:
$6.31
-
1,923En existencias
|
N.º de artículo de Mouser
511-STL47N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
|
|
1,923En existencias
|
|
|
$6.31
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
$2.95
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
57 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
- STP36N60M6
- STMicroelectronics
-
1:
$5.93
-
973En existencias
|
N.º de artículo de Mouser
511-STP36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
973En existencias
|
|
|
$5.93
|
|
|
$3.41
|
|
|
$3.17
|
|
|
$2.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
85 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
- STP46N60M6
- STMicroelectronics
-
1:
$7.40
-
990En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STP46N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
990En existencias
1,000En pedido
|
|
|
$7.40
|
|
|
$5.23
|
|
|
$4.58
|
|
|
$3.63
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
53.5 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package
- STW36N60M6
- STMicroelectronics
-
1:
$7.00
-
2,969En existencias
|
N.º de artículo de Mouser
511-STW36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package
|
|
2,969En existencias
|
|
|
$7.00
|
|
|
$4.02
|
|
|
$3.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
85 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
- STB24N60M6
- STMicroelectronics
-
1:
$3.52
-
1,555En existencias
|
N.º de artículo de Mouser
511-STB24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
1,555En existencias
|
|
|
$3.52
|
|
|
$2.31
|
|
|
$1.61
|
|
|
$1.40
|
|
|
$1.39
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
- STP33N60M6
- STMicroelectronics
-
1:
$5.03
-
670En existencias
|
N.º de artículo de Mouser
511-STP33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
670En existencias
|
|
|
$5.03
|
|
|
$3.34
|
|
|
$2.38
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
125 mOhms
|
- 25 V, 25 V
|
3.25 V
|
33.4 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
- STWA75N60M6
- STMicroelectronics
-
1:
$10.39
-
478En existencias
|
N.º de artículo de Mouser
511-STWA75N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead
|
|
478En existencias
|
|
|
$10.39
|
|
|
$6.26
|
|
|
$5.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
72 A
|
36 mOhms
|
- 25 V, 25 V
|
3.25 V
|
106 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
- STL10N60M6
- STMicroelectronics
-
1:
$2.36
-
1,767En existencias
|
N.º de artículo de Mouser
511-STL10N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
|
|
1,767En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.836
|
|
|
$0.764
|
|
|
$0.752
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
5.5 A
|
660 mOhms
|
- 25 V, 25 V
|
3.25 V
|
8.8 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
- STB18N60M6
- STMicroelectronics
-
1:
$3.05
-
883En existencias
|
N.º de artículo de Mouser
511-STB18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
883En existencias
|
|
|
$3.05
|
|
|
$1.88
|
|
|
$1.41
|
|
|
$1.19
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
280 mOhms
|
- 25 V, 25 V
|
3.25 V
|
16.8 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
- STP24N60M6
- STMicroelectronics
-
1:
$2.79
-
792En existencias
|
N.º de artículo de Mouser
511-STP24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
792En existencias
|
|
|
$2.79
|
|
|
$1.60
|
|
|
$1.45
|
|
|
$1.17
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
17 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.61
-
2,794En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,794En existencias
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.925
|
|
|
$0.835
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
7 A
|
415 mOhms
|
- 25 V, 25 V
|
3.25 V
|
13 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
$1.85
-
2,440En existencias
-
NRND
|
N.º de artículo de Mouser
511-STU3N65M6
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2,440En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.781
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.56
|
|
|
$0.515
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
3.5 A
|
1.5 Ohms
|
- 25 V, 25 V
|
2.25 V
|
6 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
- STB36N60M6
- STMicroelectronics
-
1:
$6.44
-
1,696En existencias
|
N.º de artículo de Mouser
511-STB36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
1,696En existencias
|
|
|
$6.44
|
|
|
$4.33
|
|
|
$3.13
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
85 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-247 package
- STW24N60M6
- STMicroelectronics
-
1:
$4.05
-
1,044En existencias
-
600En pedido
|
N.º de artículo de Mouser
511-STW24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-247 package
|
|
1,044En existencias
600En pedido
|
|
|
$4.05
|
|
|
$2.67
|
|
|
$1.88
|
|
|
$1.58
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 package
- STW75N60M6
- STMicroelectronics
-
1:
$11.45
-
585En existencias
-
595En pedido
|
N.º de artículo de Mouser
511-STW75N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 package
|
|
585En existencias
595En pedido
|
|
|
$11.45
|
|
|
$8.27
|
|
|
$7.88
|
|
|
$4.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
72 A
|
36 mOhms
|
- 25 V, 25 V
|
3.25 V
|
106 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a TO-220FP packa
- STF16N60M6
- STMicroelectronics
-
1:
$3.32
-
55En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STF16N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a TO-220FP packa
|
|
55En existencias
1,000En pedido
|
|
|
$3.32
|
|
|
$1.68
|
|
|
$1.52
|
|
|
$1.23
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
320 mOhms
|
- 25 V, 25 V
|
4.75 V
|
18 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220FP package
- STF36N60M6
- STMicroelectronics
-
1:
$7.02
-
319En existencias
|
N.º de artículo de Mouser
511-STF36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220FP package
|
|
319En existencias
|
|
|
$7.02
|
|
|
$4.75
|
|
|
$3.46
|
|
|
$3.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 20 V, 20 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
- STW33N60M6
- STMicroelectronics
-
1:
$5.84
-
222En existencias
|
N.º de artículo de Mouser
511-STW33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
|
|
222En existencias
|
|
|
$5.84
|
|
|
$4.07
|
|
|
$2.94
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
125 mOhms
|
- 25 V, 25 V
|
3.25 V
|
33.4 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
- STD3N65M6
- STMicroelectronics
-
1:
$1.67
-
2,441En existencias
|
N.º de artículo de Mouser
511-STD3N65M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
|
|
2,441En existencias
|
|
|
$1.67
|
|
|
$1.06
|
|
|
$0.705
|
|
|
$0.578
|
|
|
$0.506
|
|
|
$0.459
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO247-4 package
- STW48N60M6-4
- STMicroelectronics
-
1:
$9.18
-
48En existencias
|
N.º de artículo de Mouser
511-STW48N60M6-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO247-4 package
|
|
48En existencias
|
|
|
$9.18
|
|
|
$6.68
|
|
|
$5.57
|
|
|
$4.63
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
69 mOhms
|
- 25 V, 25 V
|
3.25 V
|
57 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220FP packag
- STF24N60M6
- STMicroelectronics
-
1:
$3.67
-
1En existencias
|
N.º de artículo de Mouser
511-STF24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220FP packag
|
|
1En existencias
|
|
|
$3.67
|
|
|
$1.94
|
|
|
$1.71
|
|
|
$1.44
|
|
|
Ver
|
|
|
$1.32
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package
- STD16N60M6
- STMicroelectronics
-
1:
$2.57
-
|
N.º de artículo de Mouser
511-STD16N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package
|
|
|
|
|
$2.57
|
|
|
$1.66
|
|
|
$1.19
|
|
|
$0.991
|
|
|
$0.858
|
|
|
$0.858
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
320 mOhms
|
- 25 V, 25 V
|
4.75 V
|
16.7 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET
- STWA48N60M6
- STMicroelectronics
-
1:
$10.12
-
16En existencias
-
NRND
|
N.º de artículo de Mouser
511-STWA48N60M6
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET
|
|
16En existencias
|
|
|
$10.12
|
|
|
$7.68
|
|
|
$6.40
|
|
|
$5.70
|
|
|
$5.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
69 mOhms
|
- 25 V, 25 V
|
3.25 V
|
57 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package
- STB33N60M6
- STMicroelectronics
-
1,000:
$2.24
-
Plazo de entrega no en existencias 16 Semanas
|
N.º de artículo de Mouser
511-STB33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
Plazo de entrega no en existencias 16 Semanas
|
|
Min.: 1,000
Mult.: 1,000
:
1,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MDmesh
|
Reel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a D2PAK package
- STB46N60M6
- STMicroelectronics
-
1,000:
$3.64
-
Plazo de entrega no en existencias 16 Semanas
|
N.º de artículo de Mouser
511-STB46N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
Plazo de entrega no en existencias 16 Semanas
|
|
Min.: 1,000
Mult.: 1,000
:
1,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MDmesh
|
Reel
|
|