Toshiba DTMOSV Super Junction MOSFETs
Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.
Features
- Up to 17% reduction in RDS(ON) (Drain-source ON Resistance) compared with the previous DTMOS IV
- ON Resistance lineup 0.29 to 0.56Ω
- Various package lineup: To be deployed in 2 packages (DPAK, TO-220SIS)
Applications
- Servers
- Switching power supplies for base stations or others
- Photovoltaic inverters
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Package Dimensions
View Results ( 12 ) Page
| N.º de artículo | Paquete / Cubierta | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Hoja de datos |
|---|---|---|---|---|
| TK560P60Y,RQ | DPAK-3 (TO-252-3) | 600 V | 7 A |  |
| TK380P60Y,RQ | DPAK-3 (TO-252-3) | 600 V | 9.7 A | |
| TK290P65Y,RQ | DPAK-3 (TO-252-3) | 650 V | 11.5 A | |
| TK290A60Y,S4X | TO-220-3 | 600 V | 11.5 A | |
| TK560P65Y,RQ | DPAK-3 (TO-252-3) | 650 V | 7 A | |
| TK290A65Y,S4X | TO-220-3 | 650 V | 11.5 A | |
| TK290P60Y,RQ | DPAK-3 (TO-252-3) | 600 V | 11.5 A | |
| TK560A65Y,S4X | TO-220-3 | 650 V | 7 A | |
| TK380A60Y,S4X | TO-220-3 | 600 V | 9.7 A | |
| TK380A65Y,S4X | TO-220-3 | 650 V | 9.7 A | |
Publicado: 2017-06-27
| Actualizado: 2022-06-23