Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs
Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.
Features
- High reverse voltage
- Advanced planar technology
- Low on-state resistance
- Fast switching time
- Low gate charge
- Low total switching energy
- Engineering samples available
- UL 94V-0 rated case material
- Halogen-free, lead-free, and RoHS compliant
Applications
- Charging systems for electric vehicles (EV)
- Solar inverters
- Telecom power supplies
- DC-DC converters
- DC drives
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
- Inverters
Specifications
- 650V and 1200V drain-source voltage
- Maximum 80mΩ to 23mΩ on-state resistance
- 100µA drain-source leakage current
- From to -8V to 22V continuous gate-source-voltage range
- 15V to 18V recommended turn-on gate voltage range
- 0V recommended turn-off gate voltage
- 600W power dissipation
- 100A peak drain current
- 0.54K/W maximum thermal resistance
- -55°C to +175°C operating junction temperature range
- Industrial TO-247 package with 3x and 4x leads
Videos
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Publicado: 2023-10-20
| Actualizado: 2024-10-14