|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V 15A DPAK-2
- SPD15P10P G
- Infineon Technologies
-
1:
$2.27
-
2,404En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPD15P10PG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V 15A DPAK-2
|
|
2,404En existencias
|
|
|
$2.27
|
|
|
$1.45
|
|
|
$1.01
|
|
|
$0.851
|
|
|
$0.737
|
|
|
$0.677
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
100 V
|
15 A
|
240 mOhms
|
- 20 V, 20 V
|
4 V
|
37 nC
|
- 55 C
|
+ 175 C
|
128 W
|
Enhancement
|
SIPMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V -15A TO220-3
- SPP15P10PL H
- Infineon Technologies
-
1:
$2.77
-
366En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP15P10PLH
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V -15A TO220-3
|
|
366En existencias
|
|
|
$2.77
|
|
|
$1.40
|
|
|
$1.22
|
|
|
$1.00
|
|
|
Ver
|
|
|
$0.859
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
P-Channel
|
1 Channel
|
100 V
|
15 A
|
200 mOhms
|
- 20 V, 20 V
|
4 V
|
47 nC
|
- 55 C
|
+ 175 C
|
128 W
|
Enhancement
|
SIPMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V -80A TO220-3
- SPP80P06P H
- Infineon Technologies
-
1:
$4.42
-
450En existencias
|
N.º de artículo de Mouser
726-SPP80P06PH
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V -80A TO220-3
|
|
450En existencias
|
|
|
$4.42
|
|
|
$2.90
|
|
|
$2.22
|
|
|
$1.88
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
P-Channel
|
1 Channel
|
60 V
|
80 A
|
23 mOhms
|
- 20 V, 20 V
|
2.1 V
|
115 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
SIPMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V 4.2A DPAK-2
- SPD04P10PL G
- Infineon Technologies
-
1:
$1.32
-
3,498En existencias
|
N.º de artículo de Mouser
726-SPD04P10PLG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -100V 4.2A DPAK-2
|
|
3,498En existencias
|
|
|
$1.32
|
|
|
$0.869
|
|
|
$0.573
|
|
|
$0.446
|
|
|
$0.404
|
|
|
Ver
|
|
|
$0.405
|
|
|
$0.319
|
|
|
$0.316
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
100 V
|
4.2 A
|
850 mOhms
|
- 20 V, 20 V
|
4 V
|
16 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
SIPMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V 9.7A DPAK-2
- SPD09P06PL G
- Infineon Technologies
-
1:
$1.26
-
736En existencias
|
N.º de artículo de Mouser
726-SPD09P06PLG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V 9.7A DPAK-2
|
|
736En existencias
|
|
|
$1.26
|
|
|
$0.795
|
|
|
$0.526
|
|
|
$0.432
|
|
|
$0.327
|
|
|
Ver
|
|
|
$0.386
|
|
|
$0.325
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
9.7 A
|
250 mOhms
|
- 20 V, 20 V
|
2 V
|
14 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
SIPMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V 80A D2PAK-2
- SPB80P06P G
- Infineon Technologies
-
1,000:
$1.81
-
Plazo de entrega no en existencias 12 Semanas
|
N.º de artículo de Mouser
726-SPB80P06PG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V 80A D2PAK-2
|
|
Plazo de entrega no en existencias 12 Semanas
|
|
Min.: 1,000
Mult.: 1,000
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
P-Channel
|
1 Channel
|
60 V
|
80 A
|
23 mOhms
|
- 20 V, 20 V
|
2.1 V
|
115 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
SIPMOS
|
Reel
|
|
