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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 100V 55A
- SISD5110DN-T1-UE3
- Vishay Semiconductors
-
1:
$2.41
-
2,950En existencias
-
Nuevo producto
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N.º de artículo de Mouser
78-SISD5110DN-T1-UE3
Nuevo producto
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Vishay Semiconductors
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PWRPK 100V 55A
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2,950En existencias
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$2.41
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$1.54
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$1.05
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$0.877
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Ver
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$0.772
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$0.715
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$0.69
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Min.: 1
Mult.: 1
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 12.6 m a. 10V 12.5 m a. 7.5V
- SISS5110DN-T1-GE3
- Vishay / Siliconix
-
1:
$2.00
-
2,597En existencias
|
N.º de artículo de Mouser
78-SISS5110DN-T1-GE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 12.6 m a. 10V 12.5 m a. 7.5V
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2,597En existencias
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$2.00
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$1.40
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$0.956
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$0.763
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$0.621
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Ver
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|
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$0.719
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$0.598
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Min.: 1
Mult.: 1
:
3,000
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Si
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SMD/SMT
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PowerPAK-8
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N-Channel
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1 Channel
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100 V
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46.3 A
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12.6 mOhms
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- 20 V, 20 V
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4 V
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12.8 nC
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- 55 C
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+ 150 C
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56.8 W
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Enhancement
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Reel, Cut Tape
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
- NTZD5110NT1G
- onsemi
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1:
$0.36
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130,243En existencias
|
N.º de artículo de Mouser
863-NTZD5110NT1G
|
onsemi
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
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130,243En existencias
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$0.36
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$0.217
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|
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$0.137
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|
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$0.105
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Ver
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$0.076
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$0.098
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$0.093
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$0.076
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Min.: 1
Mult.: 1
Máx.: 12,000
:
4,000
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Si
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SMD/SMT
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SOT-563-6
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N-Channel
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2 Channel
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60 V
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294 mA
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1.6 Ohms
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- 20 V, 20 V
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1 V
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700 pC
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- 55 C
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+ 150 C
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250 mW
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Enhancement
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
- SIR5110DP-T1-RE3
- Vishay / Siliconix
-
1:
$2.47
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5,683En existencias
|
N.º de artículo de Mouser
78-SIR5110DP-T1-RE3
|
Vishay / Siliconix
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
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5,683En existencias
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$2.47
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$1.68
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$1.16
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$0.932
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$0.765
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Ver
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$0.921
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$0.761
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Min.: 1
Mult.: 1
:
3,000
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Si
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SMD/SMT
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SO-8
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N-Channel
|
1 Channel
|
100 V
|
47.6 A
|
12.5 mOhms
|
- 20 V, 20 V
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4 V
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12.8 nC
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- 55 C
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+ 150 C
|
59.5 W
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Enhancement
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Reel, Cut Tape
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IRF150DM115XTMA1
- Infineon Technologies
-
1:
$4.24
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858En existencias
|
N.º de artículo de Mouser
726-IRF150DM115XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
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858En existencias
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$4.24
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$2.78
|
|
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$1.95
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$1.62
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Ver
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$1.43
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|
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$1.49
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|
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$1.48
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$1.43
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Min.: 1
Mult.: 1
:
4,800
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Si
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SMD/SMT
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WG-WDSON-5
|
N-Channel
|
1 Channel
|
150 V
|
60 A
|
11.3 mOhms
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- 20 V, 20 V
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3.8 V
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33 nC
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- 40 C
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+ 150 C
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78 W
|
Enhancement
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OptiMOS DirectFET
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Reel, Cut Tape
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TRENCH >=100V
Infineon Technologies IRF100DM116XTMA1
- IRF100DM116XTMA1
- Infineon Technologies
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4,800:
$1.71
-
No en existencias
-
Próximamente
|
N.º de artículo de Mouser
726-IRF100DM116XTMA1
Próximamente
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TRENCH >=100V
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No en existencias
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Min.: 4,800
Mult.: 4,800
:
4,800
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Si
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Reel
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