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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 Power-Transistor
- IAUZN04S7L012ATMA1
- Infineon Technologies
-
1:
$1.81
-
5,213En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUZN04S7L012ATM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 Power-Transistor
|
|
5,213En existencias
|
|
|
$1.81
|
|
|
$1.16
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|
|
$0.769
|
|
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$0.661
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|
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$0.505
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|
|
Ver
|
|
|
$0.556
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$0.499
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|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
199 A
|
1.25 mOhms
|
16 V
|
1.8 V
|
42 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 42A TDSON-8 OptiMOS 3
- BSC160N10NS3GATMA1
- Infineon Technologies
-
1:
$1.80
-
180En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-BSC160N10NS3GATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 42A TDSON-8 OptiMOS 3
|
|
180En existencias
5,000En pedido
|
|
|
$1.80
|
|
|
$1.15
|
|
|
$0.766
|
|
|
$0.604
|
|
|
$0.543
|
|
|
$0.497
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
42 A
|
13.9 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
- BSZ160N10NS3GATMA1
- Infineon Technologies
-
1:
$2.29
-
|
N.º de artículo de Mouser
726-BSZ160N10NS3GATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
|
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|
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$2.29
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$1.46
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$0.988
|
|
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$0.786
|
|
|
$0.677
|
|
|
$0.65
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|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
14 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 42A TDSON-8 OptiMOS 3
- BSC160N10NS3 G
- Infineon Technologies
-
1:
$1.80
-
4,671En existencias
|
N.º de artículo de Mouser
726-BSC160N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 42A TDSON-8 OptiMOS 3
|
|
4,671En existencias
|
|
|
$1.80
|
|
|
$1.15
|
|
|
$0.763
|
|
|
$0.625
|
|
|
$0.51
|
|
|
Ver
|
|
|
$0.60
|
|
|
$0.497
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
42 A
|
13.9 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
- BSZ160N10NS3 G
- Infineon Technologies
-
5,000:
$0.632
-
Plazo de entrega no en existencias 52 Semanas
|
N.º de artículo de Mouser
726-BSZ160N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
Min.: 5,000
Mult.: 5,000
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
14 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
OptiMOS
|
Reel
|
|
