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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 350V 35Ohm
- DN3135N8-G
- Microchip Technology
-
1:
$0.81
-
8,063En existencias
|
N.º de artículo de Mouser
689-DN3135N8-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 350V 35Ohm
|
|
8,063En existencias
|
|
|
$0.81
|
|
|
$0.69
|
|
|
$0.61
|
|
|
$0.61
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
SOT-89-3
|
N-Channel
|
1 Channel
|
350 V
|
135 mA
|
35 Ohms
|
- 20 V, 20 V
|
3.5 V
|
|
- 55 C
|
+ 150 C
|
1.3 W
|
Depletion
|
|
Reel, Cut Tape, MouseReel
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
- DMN3135LVT-7
- Diodes Incorporated
-
1:
$0.78
-
27,621En existencias
|
N.º de artículo de Mouser
621-DMN3135LVT-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
|
|
27,621En existencias
|
|
|
$0.78
|
|
|
$0.506
|
|
|
$0.322
|
|
|
$0.237
|
|
|
$0.208
|
|
|
$0.165
|
|
Min.: 1
Mult.: 1
Máx.: 4,460
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSOT-26-6
|
N-Channel
|
2 Channel
|
30 V
|
3.5 A
|
60 mOhms
|
- 10 V, 10 V
|
1.3 V
|
4.1 nC
|
- 55 C
|
+ 150 C
|
1.27 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 350V 35Ohm
- DN3135K1-G
- Microchip Technology
-
1:
$0.69
-
7,929En existencias
|
N.º de artículo de Mouser
689-DN3135K1-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 350V 35Ohm
|
|
7,929En existencias
|
|
|
$0.69
|
|
|
$0.58
|
|
|
$0.53
|
|
|
$0.53
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
350 V
|
72 mA
|
35 Ohms
|
- 20 V, 20 V
|
3.5 V
|
|
- 55 C
|
+ 150 C
|
360 mW
|
Depletion
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 25V 30V TSOT26 T&R 3K
Diodes Incorporated DMN3135LVTQ-7
- DMN3135LVTQ-7
- Diodes Incorporated
-
1:
$1.07
-
Plazo de entrega no en existencias 40 Semanas
|
N.º de artículo de Mouser
621-DMN3135LVTQ-7
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET BVDSS: 25V 30V TSOT26 T&R 3K
|
|
Plazo de entrega no en existencias 40 Semanas
|
|
|
$1.07
|
|
|
$0.758
|
|
|
$0.472
|
|
|
$0.325
|
|
|
$0.274
|
|
|
$0.191
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
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Reel, Cut Tape, MouseReel
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R017C7XKSA1
- Infineon Technologies
-
1:
$18.55
-
1,544En existencias
-
950En pedido
|
N.º de artículo de Mouser
726-IPW60R017C7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,544En existencias
950En pedido
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
109 A
|
17 mOhms
|
- 20 V, 20 V
|
3 V
|
240 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT223 N-CH 55V 5.5A
- BUK98150-55A/CUF
- Nexperia
-
1:
$0.57
-
|
N.º de artículo de Mouser
771-BUK98150-55A/CUF
|
Nexperia
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT223 N-CH 55V 5.5A
|
|
|
|
|
$0.57
|
|
|
$0.375
|
|
|
$0.296
|
|
|
$0.243
|
|
|
Ver
|
|
|
$0.114
|
|
|
$0.179
|
|
|
$0.159
|
|
|
$0.114
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
55 V
|
5.5 A
|
137 mOhms
|
- 10 V, 10 V
|
1 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
8 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DRIVER IC
Infineon Technologies DHP0050N10N5AUMA1
- DHP0050N10N5AUMA1
- Infineon Technologies
-
4,000:
$3.04
-
No en existencias
-
NRND
|
N.º de artículo de Mouser
726-DHP0050N10N5AUMA
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DRIVER IC
|
|
No en existencias
|
|
Min.: 4,000
Mult.: 4,000
:
4,000
|
|
|
Si
|
|
|
|
|
|
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|
|
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Reel
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