|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
- STP20N90K5
- STMicroelectronics
-
1:
$5.82
-
1,614En existencias
|
N.º de artículo de Mouser
511-STP20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
1,614En existencias
|
|
|
$5.82
|
|
|
$4.08
|
|
|
$3.89
|
|
|
$3.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
- STP21N90K5
- STMicroelectronics
-
1:
$7.33
-
1,395En existencias
|
N.º de artículo de Mouser
511-STP21N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
|
|
1,395En existencias
|
|
|
$7.33
|
|
|
$3.97
|
|
|
$3.64
|
|
|
$3.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
18.5 A
|
299 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
- STP40N60M2
- STMicroelectronics
-
1:
$5.31
-
995En existencias
|
N.º de artículo de Mouser
511-STP40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
|
|
995En existencias
|
|
|
$5.31
|
|
|
$3.03
|
|
|
$2.76
|
|
|
$2.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
88 mOhms
|
- 25 V, 25 V
|
3 V
|
57 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
- STP4NK80Z
- STMicroelectronics
-
1:
$2.75
-
2,100En existencias
|
N.º de artículo de Mouser
511-STP4NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
|
|
2,100En existencias
|
|
|
$2.75
|
|
|
$1.12
|
|
|
$1.02
|
|
|
$0.929
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
3.5 Ohms
|
- 30 V, 30 V
|
3 V
|
22.5 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
- STQ1NK80ZR-AP
- STMicroelectronics
-
1:
$1.27
-
4,992En existencias
|
N.º de artículo de Mouser
511-STQ1NK80ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
|
|
4,992En existencias
|
|
|
$1.27
|
|
|
$0.795
|
|
|
$0.525
|
|
|
$0.409
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.371
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
800 V
|
300 mA
|
16 Ohms
|
- 30 V, 30 V
|
3 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
|
Ammo Pack
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
- STW65N60DM6
- STMicroelectronics
-
1:
$7.81
-
508En existencias
|
N.º de artículo de Mouser
511-STW65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
|
|
508En existencias
|
|
|
$7.81
|
|
|
$5.33
|
|
|
$3.91
|
|
|
$3.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
71 mOhms
|
- 25 V, 25 V
|
3.25 V
|
54 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
- STP11NM60FDFP
- STMicroelectronics
-
1:
$3.97
-
537En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60FDFP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
|
|
537En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 65 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
579En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
579En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.678
|
|
|
$0.645
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
- STP80NF55-06
- STMicroelectronics
-
1:
$2.78
-
1,473En existencias
|
N.º de artículo de Mouser
511-STP80NF55-06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
|
|
1,473En existencias
|
|
|
$2.78
|
|
|
$1.38
|
|
|
$1.26
|
|
|
$1.05
|
|
|
$0.943
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
6.5 mOhms
|
- 20 V, 20 V
|
2 V
|
142 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
- STB36NF06LT4
- STMicroelectronics
-
1:
$2.12
-
1,248En existencias
|
N.º de artículo de Mouser
511-STB36NF06LT4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
|
|
1,248En existencias
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.917
|
|
|
$0.731
|
|
|
$0.65
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
30 A
|
40 mOhms
|
- 18 V, 18 V
|
1 V
|
17 nC
|
- 55 C
|
+ 175 C
|
70 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.84
-
251En existencias
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
|
|
|
$2.84
|
|
|
$1.83
|
|
|
$1.31
|
|
|
$1.08
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
- STU6N65M2
- STMicroelectronics
-
1:
$1.61
-
45En existencias
|
N.º de artículo de Mouser
511-STU6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
|
45En existencias
|
|
|
$1.61
|
|
|
$0.835
|
|
|
$0.622
|
|
|
$0.518
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.431
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
4 A
|
1.35 Ohms
|
- 25 V, 25 V
|
3 V
|
9.8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
823En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
823En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.271
|
|
|
$0.233
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
4.5 A
|
70 mOhms
|
- 20 V, 20 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.38
-
204En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
204En existencias
|
|
|
$3.38
|
|
|
$2.20
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
430 mOhms
|
|
5 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
- STL10LN80K5
- STMicroelectronics
-
1:
$4.01
-
923En existencias
|
N.º de artículo de Mouser
511-STL10LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
|
|
923En existencias
|
|
|
$4.01
|
|
|
$2.63
|
|
|
$1.94
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-VHV-8
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
660 mOhms
|
- 30 V, 30 V
|
5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
- STL52DN4LF7AG
- STMicroelectronics
-
1:
$2.00
-
2,805En existencias
|
N.º de artículo de Mouser
511-STL52DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
|
|
2,805En existencias
|
|
|
$2.00
|
|
|
$1.12
|
|
|
$0.915
|
|
|
$0.848
|
|
|
$0.772
|
|
|
$0.479
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
2 Channel
|
40 V
|
18 A
|
16 mOhms
|
- 20 V, 20 V
|
1.5 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 17 Amp
- STD17NF03LT4
- STMicroelectronics
-
1:
$0.57
-
6,485En existencias
|
N.º de artículo de Mouser
511-STD17NF03L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 17 Amp
|
|
6,485En existencias
|
|
|
$0.57
|
|
|
$0.411
|
|
|
$0.325
|
|
|
$0.275
|
|
|
$0.218
|
|
|
Ver
|
|
|
$0.248
|
|
|
$0.201
|
|
|
$0.193
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
17 A
|
50 mOhms
|
- 16 V, 16 V
|
1 V
|
4.8 nC
|
- 55 C
|
+ 175 C
|
30 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
- STD6N65M2
- STMicroelectronics
-
1:
$1.49
-
3,192En existencias
|
N.º de artículo de Mouser
511-STD6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
|
3,192En existencias
|
|
|
$1.49
|
|
|
$0.942
|
|
|
$0.627
|
|
|
$0.492
|
|
|
$0.448
|
|
|
$0.401
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
4 A
|
1.35 Ohms
|
- 25 V, 25 V
|
3 V
|
9.8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD8N60DM2
- STMicroelectronics
-
1:
$1.83
-
1,754En existencias
|
N.º de artículo de Mouser
511-STD8N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
1,754En existencias
|
|
|
$1.83
|
|
|
$1.17
|
|
|
$0.775
|
|
|
$0.619
|
|
|
$0.557
|
|
|
$0.505
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
570 mOhms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
- STF10N105K5
- STMicroelectronics
-
1:
$3.59
-
1,020En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STF10N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
|
|
1,020En existencias
1,000En pedido
|
|
|
$3.59
|
|
|
$1.70
|
|
|
$1.52
|
|
|
$1.34
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
6 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
21.5 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
- STF10NM60N
- STMicroelectronics
-
1:
$3.55
-
768En existencias
|
N.º de artículo de Mouser
511-STF10NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
|
|
768En existencias
|
|
|
$3.55
|
|
|
$1.82
|
|
|
$1.71
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
550 mOhms
|
- 25 V, 25 V
|
4 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
- STH6N95K5-2
- STMicroelectronics
-
1:
$3.42
-
889En existencias
|
N.º de artículo de Mouser
511-STH6N95K5-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
|
|
889En existencias
|
|
|
$3.42
|
|
|
$2.24
|
|
|
$1.56
|
|
|
$1.35
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.25 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
- STL7N10F7
- STMicroelectronics
-
1:
$1.52
-
3,133En existencias
|
N.º de artículo de Mouser
511-STL7N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
|
|
3,133En existencias
|
|
|
$1.52
|
|
|
$0.911
|
|
|
$0.639
|
|
|
$0.501
|
|
|
$0.457
|
|
|
$0.41
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
7 A
|
35 mOhms
|
- 20 V, 20 V
|
4.5 V
|
14 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 packa
- STN6N60M2
- STMicroelectronics
-
1:
$1.00
-
7,421En existencias
|
N.º de artículo de Mouser
511-STN6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 packa
|
|
7,421En existencias
|
|
|
$1.00
|
|
|
$0.599
|
|
|
$0.406
|
|
|
$0.313
|
|
|
Ver
|
|
|
$0.229
|
|
|
$0.283
|
|
|
$0.258
|
|
|
$0.229
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
5.5 A
|
1.2 Ohms
|
- 25 V, 25 V
|
4 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 9 Amp Zener SuperMESH
- STP11NK40Z
- STMicroelectronics
-
1:
$2.54
-
1,313En existencias
|
N.º de artículo de Mouser
511-STP11NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 9 Amp Zener SuperMESH
|
|
1,313En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
9 A
|
550 mOhms
|
- 30 V, 30 V
|
4.5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
|
Tube
|
|