|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
- STF7N60M2
- STMicroelectronics
-
1:
$1.71
-
1,929En existencias
|
N.º de artículo de Mouser
511-STF7N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
|
|
1,929En existencias
|
|
|
$1.71
|
|
|
$0.817
|
|
|
$0.729
|
|
|
$0.575
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.485
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
860 mOhms
|
- 25 V, 25 V
|
3 V
|
8.8 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
- STL10N60M6
- STMicroelectronics
-
1:
$2.36
-
1,767En existencias
|
N.º de artículo de Mouser
511-STL10N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
|
|
1,767En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.836
|
|
|
$0.764
|
|
|
$0.752
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
5.5 A
|
660 mOhms
|
- 25 V, 25 V
|
3.25 V
|
8.8 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
- STP24N60M2
- STMicroelectronics
-
1:
$3.47
-
1,036En existencias
|
N.º de artículo de Mouser
511-STP24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
|
|
1,036En existencias
|
|
|
$3.47
|
|
|
$1.49
|
|
|
$1.40
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
168 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STP38N65M5
- STMicroelectronics
-
1:
$3.19
-
450En existencias
|
N.º de artículo de Mouser
511-STP38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
450En existencias
|
|
|
$3.19
|
|
|
$2.69
|
|
|
$2.68
|
|
|
$2.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
- STP4NK80ZFP
- STMicroelectronics
-
1:
$3.04
-
1,355En existencias
|
N.º de artículo de Mouser
511-STP4NK80ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
|
|
1,355En existencias
|
|
|
$3.04
|
|
|
$1.17
|
|
|
$1.11
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
3.5 Ohms
|
- 30 V, 30 V
|
4.5 V
|
22.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
- STW15N80K5
- STMicroelectronics
-
1:
$5.00
-
415En existencias
|
N.º de artículo de Mouser
511-STW15N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
|
|
415En existencias
|
|
|
$5.00
|
|
|
$2.91
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
14 A
|
300 mOhms
|
- 30 V, 30 V
|
3 V
|
32 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
- STW33N60M2
- STMicroelectronics
-
1:
$5.52
-
394En existencias
|
N.º de artículo de Mouser
511-STW33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
|
|
394En existencias
|
|
|
$5.52
|
|
|
$3.25
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
108 mOhms
|
- 25 V, 25 V
|
3 V
|
45.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
7.5 A
|
600 mOhms
|
- 25 V, 25 V
|
4 V
|
13.5 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4.5 A
|
1.06 Ohms
|
- 25 V, 25 V
|
3 V
|
8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
- STD95P3LLH6AG
- STMicroelectronics
-
1:
$2.43
-
1,097En existencias
|
N.º de artículo de Mouser
511-STD95P3LLH6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
|
|
1,097En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.855
|
|
|
$0.818
|
|
|
$0.786
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
80 A
|
9.7 mOhms
|
- 18 V, 18 V
|
2.5 V
|
113 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
165 mOhms
|
- 25 V, 25 V
|
2 V
|
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
- STH200N10WF7-2
- STMicroelectronics
-
1:
$4.99
-
374En existencias
|
N.º de artículo de Mouser
511-STH200N10WF7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
|
|
374En existencias
|
|
|
$4.99
|
|
|
$3.56
|
|
|
$2.71
|
|
|
$2.68
|
|
|
$2.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
4 mOhms
|
- 20 V, 20 V
|
4.5 V
|
93 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$1.88
|
|
|
$1.53
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
160 mOhms
|
- 25 V, 25 V
|
4 V
|
36 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.61
-
2,794En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,794En existencias
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.925
|
|
|
$0.835
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
7 A
|
415 mOhms
|
- 25 V, 25 V
|
3.25 V
|
13 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.11
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.11
|
|
|
$1.34
|
|
|
$0.924
|
|
|
$0.736
|
|
|
$0.66
|
|
|
$0.628
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
100 V
|
20 A
|
24 mOhms
|
- 20 V, 20 V
|
4 V
|
14 nC
|
- 55 C
|
+ 175 C
|
5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.97
-
853En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
853En existencias
|
|
|
$3.97
|
|
|
$1.84
|
|
|
$1.69
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
- STP9NK70ZFP
- STMicroelectronics
-
1:
$3.08
-
487En existencias
|
N.º de artículo de Mouser
511-STP9NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
|
|
487En existencias
|
|
|
$3.08
|
|
|
$1.90
|
|
|
$1.69
|
|
|
$1.66
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
7.5 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3.75 V
|
48 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
- STU16N65M2
- STMicroelectronics
-
1:
$2.86
-
808En existencias
|
N.º de artículo de Mouser
511-STU16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
|
|
808En existencias
|
|
|
$2.86
|
|
|
$1.33
|
|
|
$1.21
|
|
|
$1.03
|
|
|
$0.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
- STW8N90K5
- STMicroelectronics
-
1:
$4.35
-
659En existencias
|
N.º de artículo de Mouser
511-STW8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
659En existencias
|
|
|
$4.35
|
|
|
$2.43
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
- STY50N105DK5
- STMicroelectronics
-
1:
$23.30
-
421En existencias
|
N.º de artículo de Mouser
511-STY50N105DK5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
|
|
421En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
44 A
|
100 mOhms
|
- 30 V, 30 V
|
3 V
|
175 nC
|
- 55 C
|
+ 150 C
|
625 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
- STB18N60M6
- STMicroelectronics
-
1:
$3.05
-
883En existencias
|
N.º de artículo de Mouser
511-STB18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
883En existencias
|
|
|
$3.05
|
|
|
$1.88
|
|
|
$1.41
|
|
|
$1.19
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
280 mOhms
|
- 25 V, 25 V
|
3.25 V
|
16.8 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
- STB7NK80Z-1
- STMicroelectronics
-
1:
$4.25
-
600En existencias
|
N.º de artículo de Mouser
511-STB7NK80Z-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
|
|
600En existencias
|
|
|
$4.25
|
|
|
$2.79
|
|
|
$2.09
|
|
|
$1.86
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
800 V
|
5.2 A
|
1.8 Ohms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
- STF15N95K5
- STMicroelectronics
-
1:
$4.88
-
669En existencias
|
N.º de artículo de Mouser
511-STF15N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
|
|
669En existencias
|
|
|
$4.88
|
|
|
$2.27
|
|
|
$2.15
|
|
|
$1.99
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
12 A
|
410 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 910 mOhms typ. 6 A MDmesh K5 Power
- STF6N90K5
- STMicroelectronics
-
1:
$2.80
-
983En existencias
|
N.º de artículo de Mouser
511-STF6N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 910 mOhms typ. 6 A MDmesh K5 Power
|
|
983En existencias
|
|
|
$2.80
|
|
|
$1.39
|
|
|
$1.09
|
|
|
$0.957
|
|
|
$0.951
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
6 A
|
910 mOhms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
- STFU10N80K5
- STMicroelectronics
-
1:
$3.77
-
976En existencias
|
N.º de artículo de Mouser
511-STFU10N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra
|
|
976En existencias
|
|
|
$3.77
|
|
|
$2.46
|
|
|
$1.93
|
|
|
$1.62
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
9 A
|
470 mOhms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|