|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
- STP33N60DM2
- STMicroelectronics
-
1:
$4.29
-
1,406En existencias
|
N.º de artículo de Mouser
511-STP33N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
1,406En existencias
|
|
|
$4.29
|
|
|
$2.45
|
|
|
$2.28
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag
- STP45N60DM6
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STP45N60DM6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag
|
|
|
|
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
MOSFETs N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
- STP46N60M6
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STP46N60M6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
|
|
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
53.5 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
- STP7NK80Z
- STMicroelectronics
-
1:
$3.52
-
1,935En existencias
|
N.º de artículo de Mouser
511-STP7NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
|
|
1,935En existencias
|
|
|
$3.52
|
|
|
$1.66
|
|
|
$1.57
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
5.2 A
|
1.8 Ohms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.35Ohm 11A Mdmesh M2
- STU13N60M2
- STMicroelectronics
-
1:
$2.12
-
2,389En existencias
|
N.º de artículo de Mouser
511-STU13N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.35Ohm 11A Mdmesh M2
|
|
2,389En existencias
|
|
|
$2.12
|
|
|
$0.959
|
|
|
$0.862
|
|
|
$0.725
|
|
|
Ver
|
|
|
$0.708
|
|
|
$0.636
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 25 V, 25 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
- STU7NM60N
- STMicroelectronics
-
1:
$2.93
-
1,718En existencias
|
N.º de artículo de Mouser
511-STU7NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
|
|
1,718En existencias
|
|
|
$2.93
|
|
|
$1.19
|
|
|
$1.11
|
|
|
$1.03
|
|
|
$0.992
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
900 mOhms
|
- 25 V, 25 V
|
2 V
|
14 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
MOSFETs N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package
- STW12N170K5
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STW12N170K5
|
STMicroelectronics
|
MOSFETs N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
|
|
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
5 A
|
2.9 Ohms
|
- 30 V, 30 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STW13N95K3
- STMicroelectronics
-
1:
$8.63
-
1,107En existencias
|
N.º de artículo de Mouser
511-STW13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
1,107En existencias
|
|
|
$8.63
|
|
|
$6.28
|
|
|
$5.23
|
|
|
$4.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package
- STW75N65DM6-4
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STW75N65DM6-4
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package
|
|
|
|
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
36 mOhms
|
- 25 V, 25 V
|
4.75 V
|
118 nC
|
- 55 C
|
+ 150 C
|
480 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V 0.033ohm 69A Mdmesh
- STW77N65M5
- STMicroelectronics
-
1:
$16.25
-
508En existencias
|
N.º de artículo de Mouser
511-STW77N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V 0.033ohm 69A Mdmesh
|
|
508En existencias
|
|
|
$16.25
|
|
|
$10.02
|
|
|
$9.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
30 mOhms
|
- 25 V, 25 V
|
4 V
|
200 nC
|
- 55 C
|
+ 125 C
|
400 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
MOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in
- STWA65N65DM2AG
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STWA65N65DM2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in
|
|
|
|
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
50 mOhms
|
- 25 V, 25 V
|
3 V
|
120 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 14 Amp Zener SuperMESH
- STB14NK50ZT4
- STMicroelectronics
-
1:
$3.28
-
6,135En existencias
|
N.º de artículo de Mouser
511-STB14NK50Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 14 Amp Zener SuperMESH
|
|
6,135En existencias
|
|
|
$3.28
|
|
|
$2.48
|
|
|
$2.23
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
380 mOhms
|
- 30 V, 30 V
|
3 V
|
92 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STB20NM50T4
- STMicroelectronics
-
1:
$6.15
-
957En existencias
|
N.º de artículo de Mouser
511-STB20NM50
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
957En existencias
|
|
|
$6.15
|
|
|
$4.13
|
|
|
$2.98
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
|
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 600V
- STB26NM60N
- STMicroelectronics
-
1:
$7.86
-
913En existencias
|
N.º de artículo de Mouser
511-STB26NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 600V
|
|
913En existencias
|
|
|
$7.86
|
|
|
$5.35
|
|
|
$4.11
|
|
|
$3.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
165 mOhms
|
- 30 V, 30 V
|
3 V
|
60 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
- STB28N65M2
- STMicroelectronics
-
1:
$4.32
-
1,982En existencias
|
N.º de artículo de Mouser
511-STB28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
|
|
1,982En existencias
|
|
|
$4.32
|
|
|
$2.85
|
|
|
$2.01
|
|
|
$1.84
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
150 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
170 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
- STB30N65M5
- STMicroelectronics
-
1:
$6.97
-
1,000En existencias
|
N.º de artículo de Mouser
511-STB30N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
|
|
1,000En existencias
|
|
|
$6.97
|
|
|
$4.70
|
|
|
$3.50
|
|
|
$3.49
|
|
|
$3.27
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
22 A
|
125 mOhms
|
- 25 V, 25 V
|
4 V
|
64 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
- STB45N60DM2AG
- STMicroelectronics
-
1:
$7.44
-
939En existencias
|
N.º de artículo de Mouser
511-STB45N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
|
|
939En existencias
|
|
|
$7.44
|
|
|
$5.13
|
|
|
$3.90
|
|
|
$3.89
|
|
|
$3.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
34 A
|
93 mOhms
|
- 20 V, 20 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
- STD12N60DM6
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STD12N60DM6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
|
|
|
|
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
390 mOhms
|
- 25 V, 25 V
|
4.75 V
|
17 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
- STD16N65M2
- STMicroelectronics
-
1:
$2.84
-
2,534En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
511-STD16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
|
|
2,534En existencias
2,500En pedido
|
|
|
$2.84
|
|
|
$1.84
|
|
|
$1.27
|
|
|
$1.04
|
|
|
$0.969
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
320 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 1.0 A
- STD1NK60-1
- STMicroelectronics
-
1:
$1.62
-
3,918En existencias
|
N.º de artículo de Mouser
511-STD1NK60-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 1.0 A
|
|
3,918En existencias
|
|
|
$1.62
|
|
|
$0.586
|
|
|
$0.543
|
|
|
$0.496
|
|
|
Ver
|
|
|
$0.452
|
|
|
$0.446
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
1 A
|
8 Ohms
|
- 30 V, 30 V
|
2.25 V
|
7 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 4ohm 2A SuperMESH3 FET
- STD2LN60K3
- STMicroelectronics
-
1:
$1.39
-
9,518En existencias
|
N.º de artículo de Mouser
511-STD2LN60K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 4ohm 2A SuperMESH3 FET
|
|
9,518En existencias
|
|
|
$1.39
|
|
|
$0.839
|
|
|
$0.581
|
|
|
$0.455
|
|
|
$0.414
|
|
|
$0.365
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
2 A
|
4.5 Ohms
|
- 30 V, 30 V
|
4.5 V
|
12 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH 3
- STD2N62K3
- STMicroelectronics
-
1:
$2.09
-
2,969En existencias
|
N.º de artículo de Mouser
511-STD2N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH 3
|
|
2,969En existencias
|
|
|
$2.09
|
|
|
$1.34
|
|
|
$0.906
|
|
|
$0.721
|
|
|
$0.674
|
|
|
$0.634
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
620 V
|
2.2 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 5A 0.84Ohm MDmesh II
- STD7ANM60N
- STMicroelectronics
-
1:
$2.20
-
3,478En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
511-STD7ANM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 5A 0.84Ohm MDmesh II
|
|
3,478En existencias
2,500En pedido
|
|
|
$2.20
|
|
|
$1.41
|
|
|
$0.956
|
|
|
$0.762
|
|
|
$0.732
|
|
|
$0.684
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
900 mOhms
|
- 25 V, 25 V
|
3 V
|
14 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
AEC-Q100
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET
- STD85N10F7AG
- STMicroelectronics
-
Disponibilidad restringida
|
N.º de artículo de Mouser
511-STD85N10F7AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET
|
|
|
|
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
10 mOhms
|
- 20 V, 20 V
|
2.5 V
|
45 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.56 Ohm MDmesh M5 7A 710VDss
- STD8N65M5
- STMicroelectronics
-
1:
$3.20
-
1,872En existencias
|
N.º de artículo de Mouser
511-STD8N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.56 Ohm MDmesh M5 7A 710VDss
|
|
1,872En existencias
|
|
|
$3.20
|
|
|
$2.08
|
|
|
$1.48
|
|
|
$1.26
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
560 mOhms
|
- 25 V, 25 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|