|
|
MOSFETs IFX FET >100-150V
- IPTC039N15NM5ATMA1
- Infineon Technologies
-
Disponibilidad restringida
|
N.º de artículo de Mouser
726-TC039N15NM5ATMA1
|
Infineon Technologies
|
MOSFETs IFX FET >100-150V
|
|
|
|
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
- BSC052N08NS5ATMA1
- Infineon Technologies
-
1:
$2.44
-
16,652En existencias
|
N.º de artículo de Mouser
726-BSC052N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
|
|
16,652En existencias
|
|
|
$2.44
|
|
|
$1.54
|
|
|
$1.23
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.933
|
|
|
$1.00
|
|
|
$0.965
|
|
|
$0.933
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
7.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs MOSFET_)40V 60V)
- IAUC120N06S5N022ATMA1
- Infineon Technologies
-
Disponibilidad restringida
|
N.º de artículo de Mouser
726-IAUC120N06S5N022
|
Infineon Technologies
|
MOSFETs MOSFET_)40V 60V)
|
|
|
|
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
170 A
|
2.24 mOhms
|
- 20 V, 20 V
|
2.8 V
|
68 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ075N08NS5ATMA1
- Infineon Technologies
-
1:
$1.52
-
68,901En existencias
|
N.º de artículo de Mouser
726-BSZ075N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
68,901En existencias
|
|
|
$1.52
|
|
|
$1.07
|
|
|
$0.871
|
|
|
$0.752
|
|
|
Ver
|
|
|
$0.672
|
|
|
$0.72
|
|
|
$0.709
|
|
|
$0.672
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
8.5 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LSATMA1
- Infineon Technologies
-
1:
$3.06
-
65,912En existencias
|
N.º de artículo de Mouser
726-BSC010N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
65,912En existencias
|
|
|
$3.06
|
|
|
$1.97
|
|
|
$1.35
|
|
|
$1.11
|
|
|
Ver
|
|
|
$0.953
|
|
|
$1.02
|
|
|
$1.01
|
|
|
$0.953
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
133 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
- BSC065N06LS5ATMA1
- Infineon Technologies
-
1:
$2.12
-
77,749En existencias
|
N.º de artículo de Mouser
726-BSC065N06LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
|
|
77,749En existencias
|
|
|
$2.12
|
|
|
$1.34
|
|
|
$0.894
|
|
|
$0.733
|
|
|
Ver
|
|
|
$0.582
|
|
|
$0.624
|
|
|
$0.614
|
|
|
$0.582
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
64 A
|
5.3 mOhms
|
- 20 V, 20 V
|
1.1 V
|
13 nC
|
- 55 C
|
+ 150 C
|
46 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB017N08N5
- Infineon Technologies
-
1:
$6.42
-
900En existencias
|
N.º de artículo de Mouser
726-IPB017N08N5
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
900En existencias
|
|
|
$6.42
|
|
|
$4.92
|
|
|
$3.98
|
|
|
$3.56
|
|
|
$3.13
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
1.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
223 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB020N08N5ATMA1
- Infineon Technologies
-
1:
$5.32
-
900En existencias
|
N.º de artículo de Mouser
726-IPB020N08N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
900En existencias
|
|
|
$5.32
|
|
|
$3.55
|
|
|
$2.53
|
|
|
$2.34
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
133 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
- IPB026N06NATMA1
- Infineon Technologies
-
1:
$3.14
-
1,596En existencias
|
N.º de artículo de Mouser
726-IPB026N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
|
|
1,596En existencias
|
|
|
$3.14
|
|
|
$2.05
|
|
|
$1.42
|
|
|
$1.20
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.1 V
|
66 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
- IPD025N06NATMA1
- Infineon Technologies
-
1:
$3.07
-
7,219En existencias
|
N.º de artículo de Mouser
726-IPD025N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
|
|
7,219En existencias
|
|
|
$3.07
|
|
|
$1.97
|
|
|
$1.34
|
|
|
$1.12
|
|
|
$1.04
|
|
|
$0.964
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.1 V
|
83 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
- IPD050N10N5ATMA1
- Infineon Technologies
-
1:
$3.25
-
7,555En existencias
|
N.º de artículo de Mouser
726-IPD050N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
|
|
7,555En existencias
|
|
|
$3.25
|
|
|
$1.93
|
|
|
$1.33
|
|
|
$1.11
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
80 A
|
4.3 mOhms
|
- 20 V, 20 V
|
2.2 V
|
64 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
- BSC061N08NS5ATMA1
- Infineon Technologies
-
1:
$2.54
-
6,010En existencias
|
N.º de artículo de Mouser
726-BSC061N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
|
|
6,010En existencias
|
|
|
$2.54
|
|
|
$1.67
|
|
|
$1.12
|
|
|
$0.897
|
|
|
Ver
|
|
|
$0.832
|
|
|
$0.891
|
|
|
$0.877
|
|
|
$0.832
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
82 A
|
6.1 mOhms
|
- 20 V, 20 V
|
2.2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6
- IPB010N06N
- Infineon Technologies
-
1:
$5.89
-
2,566En existencias
-
997En pedido
|
N.º de artículo de Mouser
726-IPB010N06N
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6
|
|
2,566En existencias
997En pedido
|
|
|
$5.89
|
|
|
$4.46
|
|
|
$3.61
|
|
|
$3.22
|
|
|
$2.83
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
60 V
|
180 A
|
800 uOhms
|
- 20 V, 20 V
|
2.1 V
|
243 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
- IPD025N06N
- Infineon Technologies
-
1:
$3.09
-
13,564En existencias
|
N.º de artículo de Mouser
726-IPD025N06N
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
|
|
13,564En existencias
|
|
|
$3.09
|
|
|
$2.00
|
|
|
$1.47
|
|
|
$1.24
|
|
|
$1.10
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.1 V
|
83 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSZ099N06LS5ATMA1
- Infineon Technologies
-
1:
$1.37
-
15,911En existencias
|
N.º de artículo de Mouser
726-BSZ099N06LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
15,911En existencias
|
|
|
$1.37
|
|
|
$0.88
|
|
|
$0.57
|
|
|
$0.459
|
|
|
$0.379
|
|
|
$0.354
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
40 A
|
9.9 mOhms
|
- 20 V, 20 V
|
1.1 V
|
6.9 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
- BSC110N15NS5ATMA1
- Infineon Technologies
-
1:
$3.25
-
10,242En existencias
|
N.º de artículo de Mouser
726-BSC110N15NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
|
|
10,242En existencias
|
|
|
$3.25
|
|
|
$2.24
|
|
|
$1.73
|
|
|
$1.51
|
|
|
Ver
|
|
|
$1.37
|
|
|
$1.47
|
|
|
$1.37
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
76 A
|
11 mOhms
|
- 20 V, 20 V
|
3 V
|
28 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ028N04LSATMA1
- Infineon Technologies
-
1:
$1.64
-
10,000En existencias
|
N.º de artículo de Mouser
726-BSZ028N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
10,000En existencias
|
|
|
$1.64
|
|
|
$1.04
|
|
|
$0.69
|
|
|
$0.541
|
|
|
Ver
|
|
|
$0.401
|
|
|
$0.453
|
|
|
$0.452
|
|
|
$0.401
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
114 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8 OptiMOS
- BSC014N06NS
- Infineon Technologies
-
1:
$3.80
-
6,628En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-BSC014N06NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8 OptiMOS
|
|
6,628En existencias
5,000En pedido
|
|
|
$3.80
|
|
|
$2.48
|
|
|
$1.94
|
|
|
$1.63
|
|
|
$1.46
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
1.45 mOhms
|
- 20 V, 20 V
|
2.1 V
|
89 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LS
- Infineon Technologies
-
1:
$2.43
-
26,374En existencias
|
N.º de artículo de Mouser
726-BSC010N04LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
26,374En existencias
|
|
|
$2.43
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.881
|
|
|
Ver
|
|
|
$0.763
|
|
|
$0.775
|
|
|
$0.763
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
95 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ017NE2LS5IATMA1
- Infineon Technologies
-
1:
$1.92
-
4,407En existencias
|
N.º de artículo de Mouser
726-BSZ017NE2LS5IATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
4,407En existencias
|
|
|
$1.92
|
|
|
$1.23
|
|
|
$0.822
|
|
|
$0.651
|
|
|
Ver
|
|
|
$0.544
|
|
|
$0.583
|
|
|
$0.579
|
|
|
$0.544
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
1.9 mOhms
|
- 16 V, 16 V
|
2 V
|
22 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ084N08NS5ATMA1
- Infineon Technologies
-
1:
$2.18
-
10,772En existencias
|
N.º de artículo de Mouser
726-BSZ084N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
10,772En existencias
|
|
|
$2.18
|
|
|
$1.39
|
|
|
$0.922
|
|
|
$0.753
|
|
|
Ver
|
|
|
$0.60
|
|
|
$0.643
|
|
|
$0.633
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
11.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC41N06S5L100ATMA1
- Infineon Technologies
-
1:
$1.30
-
14,713En existencias
|
N.º de artículo de Mouser
726-IAUC41N06S5L100A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
14,713En existencias
|
|
|
$1.30
|
|
|
$0.817
|
|
|
$0.54
|
|
|
$0.421
|
|
|
Ver
|
|
|
$0.33
|
|
|
$0.354
|
|
|
$0.353
|
|
|
$0.33
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8-3
|
N-Channel
|
1 Channel
|
60 V
|
41 A
|
10 mOhms
|
- 16 V, 16 V
|
1.7 V
|
12.7 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSC034N06NSATMA1
- Infineon Technologies
-
1:
$2.76
-
12,667En existencias
|
N.º de artículo de Mouser
726-BSC034N06NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
12,667En existencias
|
|
|
$2.76
|
|
|
$1.77
|
|
|
$1.22
|
|
|
$0.979
|
|
|
Ver
|
|
|
$0.823
|
|
|
$0.882
|
|
|
$0.868
|
|
|
$0.823
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.4 mOhms
|
- 20 V, 20 V
|
2.1 V
|
33 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ031NE2LS5ATMA1
- Infineon Technologies
-
1:
$1.42
-
6,913En existencias
|
N.º de artículo de Mouser
726-BSZ031NE2LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
6,913En existencias
|
|
|
$1.42
|
|
|
$0.89
|
|
|
$0.594
|
|
|
$0.464
|
|
|
Ver
|
|
|
$0.373
|
|
|
$0.40
|
|
|
$0.393
|
|
|
$0.373
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
3.2 mOhms
|
- 20 V, 20 V
|
2 V
|
13.6 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB031N08N5
- Infineon Technologies
-
1:
$3.86
-
1,305En existencias
|
N.º de artículo de Mouser
726-IPB031N08N5
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
1,305En existencias
|
|
|
$3.86
|
|
|
$2.53
|
|
|
$1.86
|
|
|
$1.69
|
|
|
$1.47
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|