|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
- IPD35N12S3L24ATMA1
- Infineon Technologies
-
1:
$2.28
-
23,547En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD35N12S3L24AT
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
|
|
23,547En existencias
|
|
|
$2.28
|
|
|
$1.46
|
|
|
$0.992
|
|
|
$0.793
|
|
|
$0.73
|
|
|
$0.718
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
- IKY50N120CH7XKSA1
- Infineon Technologies
-
1:
$5.38
-
425En existencias
|
N.º de artículo de Mouser
726-IKY50N120CH7XKSA
|
Infineon Technologies
|
IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
|
|
425En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPTC012N06NM5ATMA1
- Infineon Technologies
-
1:
$5.79
-
3,342En existencias
|
N.º de artículo de Mouser
726-IPTC012N06NM5ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
3,342En existencias
|
|
|
$5.79
|
|
|
$3.88
|
|
|
$2.79
|
|
|
$2.73
|
|
|
$2.58
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
MOSFETs
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
|
|
|
IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
- IKQ100N120CH7XKSA1
- Infineon Technologies
-
1:
$10.98
-
650En existencias
-
710En pedido
|
N.º de artículo de Mouser
726-Q100N120CH7XKSA1
|
Infineon Technologies
|
IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
|
|
650En existencias
710En pedido
|
|
|
$10.98
|
|
|
$6.54
|
|
|
$5.95
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ075N08NS5ATMA1
- Infineon Technologies
-
1:
$1.52
-
68,901En existencias
|
N.º de artículo de Mouser
726-BSZ075N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
68,901En existencias
|
|
|
$1.52
|
|
|
$1.07
|
|
|
$0.871
|
|
|
$0.752
|
|
|
Ver
|
|
|
$0.672
|
|
|
$0.72
|
|
|
$0.709
|
|
|
$0.672
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD068N10N3GATMA1
- Infineon Technologies
-
1:
$1.88
-
33,148En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD068N10N3GATMA
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
33,148En existencias
|
|
|
$1.88
|
|
|
$1.36
|
|
|
$1.03
|
|
|
$0.962
|
|
|
$0.962
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC110N06NS3 G
- Infineon Technologies
-
1:
$1.43
-
79,850En existencias
|
N.º de artículo de Mouser
726-BSC110N06NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
|
|
79,850En existencias
|
|
|
$1.43
|
|
|
$0.896
|
|
|
$0.595
|
|
|
$0.47
|
|
|
$0.388
|
|
|
Ver
|
|
|
$0.423
|
|
|
$0.388
|
|
|
$0.386
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
|
|
|
IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247 package
- IKW40N65ET7XKSA1
- Infineon Technologies
-
1:
$3.81
-
7,871En existencias
|
N.º de artículo de Mouser
726-IKW40N65ET7XKSA1
|
Infineon Technologies
|
IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247 package
|
|
7,871En existencias
|
|
|
$3.81
|
|
|
$1.96
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs de SiC SIC_DISCRETE
- AIMBG120R080M1XTMA1
- Infineon Technologies
-
1:
$7.66
-
1,330En existencias
|
N.º de artículo de Mouser
726-AIMBG120R080M1X1
|
Infineon Technologies
|
MOSFETs de SiC SIC_DISCRETE
|
|
1,330En existencias
|
|
|
$7.66
|
|
|
$4.90
|
|
|
$4.33
|
|
|
$4.33
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IQE022N06LM5ATMA1
- Infineon Technologies
-
1:
$3.28
-
4,462En existencias
|
N.º de artículo de Mouser
726-E022N06LM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,462En existencias
|
|
|
$3.28
|
|
|
$2.14
|
|
|
$1.49
|
|
|
$1.25
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.21
|
|
|
$1.14
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TSON-8
|
N-Channel
|
|
|
|
IGBTs 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
- IKQ75N120CS7XKSA1
- Infineon Technologies
-
1:
$10.74
-
426En existencias
|
N.º de artículo de Mouser
726-IKQ75N120CS7XKSA
|
Infineon Technologies
|
IGBTs 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
|
|
426En existencias
|
|
|
$10.74
|
|
|
$6.40
|
|
|
$5.79
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
- IKQ50N120CH7XKSA1
- Infineon Technologies
-
1:
$5.77
-
451En existencias
|
N.º de artículo de Mouser
726-IKQ50N120CH7XKSA
|
Infineon Technologies
|
IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
|
|
451En existencias
|
|
|
$5.77
|
|
|
$4.32
|
|
|
$3.98
|
|
|
$3.80
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- ISC800P06LMATMA1
- Infineon Technologies
-
1:
$1.74
-
3,283En existencias
|
N.º de artículo de Mouser
726-ISC800P06LMATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
3,283En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.741
|
|
|
$0.585
|
|
|
Ver
|
|
|
$0.496
|
|
|
$0.531
|
|
|
$0.503
|
|
|
$0.496
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TDSON-8
|
P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- ISC009N06LM5ATMA1
- Infineon Technologies
-
1:
$5.42
-
8,493En existencias
-
4,990En pedido
|
N.º de artículo de Mouser
726-ISC009N06LM5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
8,493En existencias
4,990En pedido
|
|
|
$5.42
|
|
|
$3.61
|
|
|
$2.59
|
|
|
$2.50
|
|
|
$2.41
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TSON-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS260N10S5N019TATMA1
- Infineon Technologies
-
1:
$5.96
-
6,475En existencias
|
N.º de artículo de Mouser
726-US260N10S5N019T1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,475En existencias
|
|
|
$5.96
|
|
|
$4.00
|
|
|
$2.88
|
|
|
$2.84
|
|
|
$2.65
|
|
|
$2.65
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
MOSFETs
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V SINGLE N-CH 1.4mOhms 50nC
- IRFH5300TRPBF
- Infineon Technologies
-
1:
$1.93
-
28,923En existencias
|
N.º de artículo de Mouser
942-IRFH5300TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V SINGLE N-CH 1.4mOhms 50nC
|
|
28,923En existencias
|
|
|
$1.93
|
|
|
$1.24
|
|
|
$0.832
|
|
|
$0.66
|
|
|
Ver
|
|
|
$0.575
|
|
|
$0.604
|
|
|
$0.575
|
|
|
$0.575
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PQFN-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LSATMA1
- Infineon Technologies
-
1:
$3.06
-
65,912En existencias
|
N.º de artículo de Mouser
726-BSC010N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
65,912En existencias
|
|
|
$3.06
|
|
|
$1.97
|
|
|
$1.35
|
|
|
$1.11
|
|
|
Ver
|
|
|
$0.953
|
|
|
$1.02
|
|
|
$1.01
|
|
|
$0.953
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N and P-Ch 20V 950mA -530mA SOT-363-6
- BSD235CH6327XTSA1
- Infineon Technologies
-
1:
$0.44
-
265,927En existencias
|
N.º de artículo de Mouser
726-BSD235CH6327
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N and P-Ch 20V 950mA -530mA SOT-363-6
|
|
265,927En existencias
|
|
|
$0.44
|
|
|
$0.27
|
|
|
$0.171
|
|
|
$0.128
|
|
|
$0.077
|
|
|
Ver
|
|
|
$0.114
|
|
|
$0.073
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel, P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
- IRF7341GTRPBF
- Infineon Technologies
-
1:
$2.57
-
24,042En existencias
|
N.º de artículo de Mouser
942-IRF7341GTRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLANAR FET
|
|
24,042En existencias
|
|
|
$2.57
|
|
|
$1.69
|
|
|
$1.14
|
|
|
$0.911
|
|
|
$0.907
|
|
|
$0.847
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IQE065N10NM5CGSCATMA1
- Infineon Technologies
-
1:
$3.45
-
4,390En existencias
|
N.º de artículo de Mouser
726-IQE065N10NM5CGSC
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
4,390En existencias
|
|
|
$3.45
|
|
|
$2.26
|
|
|
$1.57
|
|
|
$1.36
|
|
|
$1.28
|
|
|
$1.27
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
|
|
|
Módulos IGBT IGBT Module 200A 1700V
- FF200R17KE4
- Infineon Technologies
-
1:
$137.70
-
30En existencias
|
N.º de artículo de Mouser
641-FF200R17KE4
|
Infineon Technologies
|
Módulos IGBT IGBT Module 200A 1700V
|
|
30En existencias
|
|
|
$137.70
|
|
|
$114.54
|
|
|
$104.32
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
62 mm
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
- BSC360N15NS3 G
- Infineon Technologies
-
1:
$2.44
-
5,568En existencias
|
N.º de artículo de Mouser
726-BSC360N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
|
|
5,568En existencias
|
|
|
$2.44
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.884
|
|
|
$0.819
|
|
|
$0.765
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -1.5A SOT-23-3
- BSS314PEH6327XTSA1
- Infineon Technologies
-
1:
$0.39
-
61,344En existencias
|
N.º de artículo de Mouser
726-BSS314PEH6327XTS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -1.5A SOT-23-3
|
|
61,344En existencias
|
|
|
$0.39
|
|
|
$0.235
|
|
|
$0.148
|
|
|
$0.111
|
|
|
$0.079
|
|
|
Ver
|
|
|
$0.095
|
|
|
$0.058
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOT-23-3
|
P-Channel
|
|
|
|
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
- IKW40N120CH7XKSA1
- Infineon Technologies
-
1:
$6.22
-
630En existencias
|
N.º de artículo de Mouser
726-IKW40N120CH7XKSA
|
Infineon Technologies
|
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
|
|
630En existencias
|
|
|
$6.22
|
|
|
$3.77
|
|
|
$3.09
|
|
|
$3.03
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPF012N06NF2SATMA1
- Infineon Technologies
-
1:
$4.20
-
892En existencias
|
N.º de artículo de Mouser
726-IPF012N06NF2SATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
892En existencias
|
|
|
$4.20
|
|
|
$1.84
|
|
|
$1.66
|
|
|
$1.66
|
|
Min.: 1
Mult.: 1
:
800
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|