|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
- STL45P3LLH6
- STMicroelectronics
-
1:
$1.93
-
2,887En existencias
|
N.º de artículo de Mouser
511-STL45P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
|
|
2,887En existencias
|
|
|
$1.93
|
|
|
$1.21
|
|
|
$0.795
|
|
|
$0.631
|
|
|
$0.56
|
|
|
$0.475
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in
- STL7N6LF3
- STMicroelectronics
-
1:
$1.81
-
1,480En existencias
|
N.º de artículo de Mouser
511-STL7N6LF3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in
|
|
1,480En existencias
|
|
|
$1.81
|
|
|
$1.14
|
|
|
$0.773
|
|
|
$0.611
|
|
|
$0.56
|
|
|
$0.509
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.97
-
853En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
853En existencias
|
|
|
$3.97
|
|
|
$1.84
|
|
|
$1.69
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
- STP9NK70ZFP
- STMicroelectronics
-
1:
$3.08
-
487En existencias
|
N.º de artículo de Mouser
511-STP9NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
|
|
487En existencias
|
|
|
$3.08
|
|
|
$1.90
|
|
|
$1.69
|
|
|
$1.66
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
- STU10NM60N
- STMicroelectronics
-
1:
$4.01
-
2,998En existencias
-
2,998En pedido
|
N.º de artículo de Mouser
511-STU10NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
|
|
2,998En existencias
2,998En pedido
|
|
|
$4.01
|
|
|
$2.62
|
|
|
$2.05
|
|
|
$1.72
|
|
|
Ver
|
|
|
$1.59
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
- STU16N65M2
- STMicroelectronics
-
1:
$2.86
-
808En existencias
|
N.º de artículo de Mouser
511-STU16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
|
|
808En existencias
|
|
|
$2.86
|
|
|
$1.33
|
|
|
$1.21
|
|
|
$1.03
|
|
|
$0.98
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 100V-0.22ohms 6A
- STU6NF10
- STMicroelectronics
-
1:
$1.28
-
4,939En existencias
|
N.º de artículo de Mouser
511-STU6NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 100V-0.22ohms 6A
|
|
4,939En existencias
|
|
|
$1.28
|
|
|
$0.555
|
|
|
$0.504
|
|
|
$0.415
|
|
|
Ver
|
|
|
$0.347
|
|
|
$0.323
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
- STW8N90K5
- STMicroelectronics
-
1:
$4.35
-
659En existencias
|
N.º de artículo de Mouser
511-STW8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
659En existencias
|
|
|
$4.35
|
|
|
$2.43
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
- STY50N105DK5
- STMicroelectronics
-
1:
$23.30
-
406En existencias
|
N.º de artículo de Mouser
511-STY50N105DK5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
|
|
406En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Medium Power +30VCEO +5VBEO
- 2SD882
- STMicroelectronics
-
1:
$1.28
-
3,488En existencias
|
N.º de artículo del Fabricante
2SD882
N.º de artículo de Mouser
511-2SD882
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Medium Power +30VCEO +5VBEO
|
|
3,488En existencias
|
|
|
$1.28
|
|
|
$0.60
|
|
|
$0.418
|
|
|
$0.358
|
|
|
Ver
|
|
|
$0.335
|
|
|
$0.29
|
|
|
$0.289
|
|
|
$0.284
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
SOT-32-3
|
NPN
|
|
|
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
$21.75
-
575En existencias
|
N.º de artículo de Mouser
511-PD55015TR-E
|
STMicroelectronics
|
Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
575En existencias
|
|
|
$21.75
|
|
|
$16.32
|
|
|
$15.25
|
|
|
$14.99
|
|
Min.: 1
Mult.: 1
:
600
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)
- STB23NM50N
- STMicroelectronics
-
1:
$4.83
-
476En existencias
|
N.º de artículo de Mouser
511-STB23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)
|
|
476En existencias
|
|
|
$4.83
|
|
|
$3.77
|
|
|
$2.70
|
|
|
$2.63
|
|
|
$2.46
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD10N60DM2
- STMicroelectronics
-
1:
$1.96
-
2,122En existencias
|
N.º de artículo de Mouser
511-STD10N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,122En existencias
|
|
|
$1.96
|
|
|
$1.26
|
|
|
$0.844
|
|
|
$0.67
|
|
|
$0.615
|
|
|
$0.585
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
- STD5N62K3
- STMicroelectronics
-
1:
$1.77
-
1,691En existencias
|
N.º de artículo de Mouser
511-STD5N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
|
|
1,691En existencias
|
|
|
$1.77
|
|
|
$1.13
|
|
|
$0.756
|
|
|
$0.597
|
|
|
$0.546
|
|
|
$0.499
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF27N60M2-EP
- STMicroelectronics
-
1:
$3.56
-
707En existencias
|
N.º de artículo de Mouser
511-STF27N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
707En existencias
|
|
|
$3.56
|
|
|
$1.80
|
|
|
$1.63
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
- STF6N65K3
- STMicroelectronics
-
1:
$1.13
-
795En existencias
|
N.º de artículo de Mouser
511-STF6N65K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
|
|
795En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
- STF7N60M2
- STMicroelectronics
-
1:
$1.71
-
1,929En existencias
|
N.º de artículo de Mouser
511-STF7N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
|
|
1,929En existencias
|
|
|
$1.71
|
|
|
$0.817
|
|
|
$0.729
|
|
|
$0.575
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.485
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 4.7 A MDmesh 2nd Gen
- STF7NM60N
- STMicroelectronics
-
1:
$2.49
-
571En existencias
|
N.º de artículo de Mouser
511-STF7NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 4.7 A MDmesh 2nd Gen
|
|
571En existencias
|
|
|
$2.49
|
|
|
$1.42
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
- STF9NM60N
- STMicroelectronics
-
1:
$2.67
-
1,612En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STF9NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
|
|
1,612En existencias
1,000En pedido
|
|
|
$2.67
|
|
|
$1.17
|
|
|
$1.04
|
|
|
$0.911
|
|
|
Ver
|
|
|
$0.849
|
|
|
$0.819
|
|
|
$0.776
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
- STGB30H60DLLFBAG
- STMicroelectronics
-
1:
$3.57
-
979En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STGB30H60DLLFBAG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
|
|
979En existencias
1,000En pedido
|
|
|
$3.57
|
|
|
$2.34
|
|
|
$1.64
|
|
|
$1.43
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
- STGIB15CH60S-L
- STMicroelectronics
-
1:
$14.09
-
121En existencias
|
N.º de artículo de Mouser
511-STGIB15CH60S-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
|
|
121En existencias
|
|
|
$14.09
|
|
|
$10.52
|
|
|
$8.05
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBTs 600V 20A High Speed Trench Gate IGBT
- STGP20H60DF
- STMicroelectronics
-
1:
$2.42
-
1,066En existencias
|
N.º de artículo de Mouser
511-STGP20H60DF
|
STMicroelectronics
|
IGBTs 600V 20A High Speed Trench Gate IGBT
|
|
1,066En existencias
|
|
|
$2.42
|
|
|
$1.19
|
|
|
$1.07
|
|
|
$0.852
|
|
|
$0.782
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
- STGWT40HP65FB
- STMicroelectronics
-
1:
$3.33
-
833En existencias
|
N.º de artículo de Mouser
511-STGWT40HP65FB
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
|
|
833En existencias
|
|
|
$3.33
|
|
|
$1.81
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
- STL10N60M6
- STMicroelectronics
-
1:
$2.36
-
1,767En existencias
|
N.º de artículo de Mouser
511-STL10N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
|
|
1,767En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.836
|
|
|
$0.764
|
|
|
$0.752
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- STN83003
- STMicroelectronics
-
1:
$0.86
-
6,422En existencias
-
4,000En pedido
|
N.º de artículo de Mouser
511-STN83003
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
6,422En existencias
4,000En pedido
|
|
|
$0.86
|
|
|
$0.534
|
|
|
$0.346
|
|
|
$0.265
|
|
|
$0.226
|
|
|
Ver
|
|
|
$0.21
|
|
|
$0.19
|
|
|
$0.178
|
|
|
$0.162
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-223-4
|
NPN
|
|