|
|
Módulos IGBT SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
- STGIPN3H60AT
- STMicroelectronics
-
1:
$7.93
-
357En existencias
|
N.º de artículo de Mouser
511-STGIPN3H60AT
|
STMicroelectronics
|
Módulos IGBT SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
|
|
357En existencias
|
|
|
$7.93
|
|
|
$5.22
|
|
|
$4.14
|
|
|
$4.00
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
NDIP-26
|
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
- STGWA15M120DF3
- STMicroelectronics
-
1:
$5.15
-
467En existencias
|
N.º de artículo de Mouser
511-STGWA15M120DF3
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
|
|
467En existencias
|
|
|
$5.15
|
|
|
$3.42
|
|
|
$2.72
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
- STL33N60M2
- STMicroelectronics
-
1:
$4.97
-
1,617En existencias
|
N.º de artículo de Mouser
511-STL33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
|
|
1,617En existencias
|
|
|
$4.97
|
|
|
$4.75
|
|
|
$3.72
|
|
|
$3.31
|
|
|
$2.83
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
- STP19NM50N
- STMicroelectronics
-
1:
$3.68
-
644En existencias
|
N.º de artículo de Mouser
511-STP19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
|
|
644En existencias
|
|
|
$3.68
|
|
|
$2.33
|
|
|
$2.20
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh V
- STP31N65M5
- STMicroelectronics
-
1:
$4.36
-
739En existencias
|
N.º de artículo de Mouser
511-STP31N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh V
|
|
739En existencias
|
|
|
$4.36
|
|
|
$2.05
|
|
|
$1.94
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STU4N62K3
- STMicroelectronics
-
1:
$2.06
-
2,904En existencias
|
N.º de artículo de Mouser
511-STU4N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
2,904En existencias
|
|
|
$2.06
|
|
|
$1.01
|
|
|
$0.904
|
|
|
$0.763
|
|
|
$0.675
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15A MDmesh FET
- STW18N65M5
- STMicroelectronics
-
1:
$4.28
-
687En existencias
|
N.º de artículo de Mouser
511-STW18N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15A MDmesh FET
|
|
687En existencias
|
|
|
$4.28
|
|
|
$2.19
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistores Darlington PWR BIP/S.SIGNAL
- 2ST501T
- STMicroelectronics
-
1:
$2.17
-
1,936En existencias
|
N.º de artículo del Fabricante
2ST501T
N.º de artículo de Mouser
511-2ST501T
|
STMicroelectronics
|
Transistores Darlington PWR BIP/S.SIGNAL
|
|
1,936En existencias
|
|
|
$2.17
|
|
|
$0.906
|
|
|
$0.829
|
|
|
$0.70
|
|
|
Ver
|
|
|
$0.651
|
|
|
$0.633
|
|
|
$0.586
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- BUL1102E
- STMicroelectronics
-
1:
$1.62
-
1,523En existencias
|
N.º de artículo de Mouser
511-BUL1102E
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,523En existencias
|
|
|
$1.62
|
|
|
$1.24
|
|
|
$0.879
|
|
|
$0.721
|
|
|
Ver
|
|
|
$0.572
|
|
|
$0.556
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- ST13007D
- STMicroelectronics
-
1:
$2.12
-
1,315En existencias
|
N.º de artículo de Mouser
511-ST13007D
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,315En existencias
|
|
|
$2.12
|
|
|
$1.03
|
|
|
$0.781
|
|
|
$0.704
|
|
|
Ver
|
|
|
$0.67
|
|
|
$0.619
|
|
|
$0.568
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores Darlington NPN Power Darlington
- ST901T
- STMicroelectronics
-
1:
$1.39
-
3,279En existencias
|
N.º de artículo del Fabricante
ST901T
N.º de artículo de Mouser
511-ST901T
|
STMicroelectronics
|
Transistores Darlington NPN Power Darlington
|
|
3,279En existencias
|
|
|
$1.39
|
|
|
$0.654
|
|
|
$0.53
|
|
|
$0.41
|
|
|
Ver
|
|
|
$0.367
|
|
|
$0.345
|
|
|
$0.33
|
|
|
$0.318
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
- STD3NM60N
- STMicroelectronics
-
1:
$1.74
-
2,222En existencias
|
N.º de artículo de Mouser
511-STD3NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
|
|
2,222En existencias
|
|
|
$1.74
|
|
|
$0.947
|
|
|
$0.695
|
|
|
$0.591
|
|
|
$0.537
|
|
|
$0.492
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
- STD95P3LLH6AG
- STMicroelectronics
-
1:
$2.43
-
1,097En existencias
|
N.º de artículo de Mouser
511-STD95P3LLH6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
|
|
1,097En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.855
|
|
|
$0.818
|
|
|
$0.786
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
- STFH24N60M2
- STMicroelectronics
-
1:
$2.18
-
918En existencias
|
N.º de artículo de Mouser
511-STFH24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
|
|
918En existencias
|
|
|
$2.18
|
|
|
$1.40
|
|
|
$1.27
|
|
|
$1.16
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
$13.16
-
97En existencias
|
N.º de artículo de Mouser
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
|
|
97En existencias
|
|
|
$13.16
|
|
|
$8.88
|
|
|
$7.53
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2F-26
|
|
|
|
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
- STGW80H65DFB-4
- STMicroelectronics
-
1:
$8.26
-
246En existencias
|
N.º de artículo de Mouser
511-STGW80H65DFB-4
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
|
|
246En existencias
|
|
|
$8.26
|
|
|
$6.01
|
|
|
$5.01
|
|
|
$4.17
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
- STGWA50HP65FB2
- STMicroelectronics
-
1:
$3.62
-
662En existencias
-
600En pedido
|
N.º de artículo de Mouser
511-STGWA50HP65FB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
|
|
662En existencias
600En pedido
|
|
|
$3.62
|
|
|
$1.98
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
- STGWA80H65FB
- STMicroelectronics
-
1:
$6.12
-
521En existencias
|
N.º de artículo de Mouser
511-STGWA80H65FB
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
|
|
521En existencias
|
|
|
$6.12
|
|
|
$4.27
|
|
|
$3.46
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$1.88
|
|
|
$1.53
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.61
-
2,794En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,794En existencias
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.925
|
|
|
$0.835
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
- STL36N55M5
- STMicroelectronics
-
1:
$6.18
-
2,982En existencias
|
N.º de artículo de Mouser
511-STL36N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
|
|
2,982En existencias
|
|
|
$6.18
|
|
|
$4.29
|
|
|
$3.11
|
|
|
$3.05
|
|
|
$2.91
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.11
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.11
|
|
|
$1.34
|
|
|
$0.924
|
|
|
$0.736
|
|
|
$0.66
|
|
|
$0.628
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|